Leakage Current Characteristics and Ferroelectric Properties of Lead Zirconate Titanate Films Deposited by Chemical Vapor Deposition
정수옥Su Ock Chung,이원종Won Jong Lee
Abstract
Leakage current characteristics and ferroelectric properties of lead zirconate titanate(PZT) films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition were investigated. Pt/Ti and RuO₂ were used as bottom electrodes for PZT film. The nucleation of PZT perovskite phase was more difficult on RuO₂ electrodes than on Pt electrodes, and the PZT films grown on RuO₂ tend to have PbO_x second phase. PZT film without PbO_x phase could be grown on RuO₂ by introducing a proper seed layer and by controlling the flow rates of Metal-organic source (particularly Pb(DPM)₂). For the PZT films on RuO₂ with improved microstructure, an excellent leakage current density of 10^(-6)A/㎠ at 100 ㎸/㎝ was obtained from the Pt(top)/PZT/RuO₂ capacitor. Leakage current characteristics and ferroelectric properties of PZT capacitors with four different electrode configurations were investigated. The RuO₂∥ RuO₂ capacitor showed a leakage current density of as high as 10^(-4) A/ ㎠ at 100 ㎸/㎝, which was attributed to the high temperature processes for RuO₂ top electrodes fabrications. The fatigue characteristics of PZT capacitors depend on the electrode material rather than the microstructure of PZT films.