| Thermoelectric properties of the n-type (Bi₂Te₃)_(0.9)(Sb₂Te₃)_(0.05)(Sb₂Se₃)_(0.05) alloy prepared by melting/grinding and hot pressing, were investigated with variation of the doping amount of SbI₃and excess Te. With increasing the doping amount of SbI₃ and excess Te, the Seebeck coefficient and electrical resistivity of the hot-pressed (Bi₂Te₃)_(0.9)(Sb₂Te₃)_(0.05)(Sb₂Te₃)_(0.05) alloy were lowered due to the increase in the electron concentration. When SbI₃ and excess Te were doped within 0.1 wt%, SbI₃ exhibited doping effect, i.e., increase in the electron concentration, 2.8 times larger than that of excess Te. The hot-pressed (Bi₂Te3)_(0.9)(Sb₂Te3)_(0.05)(Sb₂Se₃)_(0.05) alloy exhibited maximum figure-of-merits of 2.02×10^(-3)/K and 2.22×10^(-3)/K with doping of 0.025 wt% SbI₃ and 0.2 wt% excess Te, respectively. |
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