발간논문

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Vol.38, No.2, 376 ~ 380, 2000
Title
Pesearch Paper / Electronic , Magnetic & Optical Matrials : Formation of Denuded Zone and Bulk Microdefects in a Czochralski - Grown Silicon Wafer by Internal Gettering
허태훈Tae Hoon Huh,유한권Han Gwon Ryu,김현수Hyun Soo Kim,노재상Jae Sang Ro
Abstract
In this study we investigated the formation of denuded zone and bulk microdefects by three-step-annealing in a Czochralski grown silicon wafer. Three-step-annealing was performed in a sequence of high temperature (900-1100℃), low temperature (600-800℃) and medium temperature (850-950℃) respectively. Oxygen concentration profiles by outdiffusion in the 1st step annealing were calculated using error-function-solutions to Fick`s 2nd law. Based on these results, denuded zone width were determined after the 2nd and the 3rd step annealing. The calculated values of denuded zone width were correlated well with the measured ones. The denuded zone width was found out to be proportional to the square root of denudation time (the 1st step annealing time). Morphological changes of bulk microdefects were observed according to changes of the 3rd step annealing time. Finally the effect of pre-oxidation on the changes of denuded zone width is also discussed.
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