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Vol.38, No.2, 372 ~ 376, 2000
Title
Pesearch Paper / Electronic , Magnetic & Optical Matrials : Direct Bonding of Si Wafer Using Linear Annealing Method - ( 1 ) SiⅡSiO2 Bonding
이진우Jin Woo Lee,강춘식Choon Sik Kang
Abstract
Si∥SiO₂ structure was prepared by using Silicon Direct Bonding(SDB) of a bare Si wafer to the oxidized Si wafer. Linear annealing method was applied to the SOI formation instead of conventional furnace annealing. IR images and a cross-sectional SEM image showed nearly perfect bonding interface. The bonding strength was measured by crack-opening method and tensile test method. The results showed that the bonding strength increased with increasing the annealing temperature. By tensile test, interface oxide of a bonded pair was split into two parts. One part was left on the surface of the Si wafer where the oxide had grown up, while the other part was separated from the wafer and attached strongly to the other Si wafer. From this result, Linear annealing method was considered to be applicable to the SOI fabrication.
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