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Vol.38, No.2, 366 ~ 372, 2000
Title
Pesearch Paper / Electronic , Magnetic & Optical Matrials : Direct Bonding of Si Wafer Using Linear Annealing Method - ( 1 ) SiⅡSi Bonding
이진우Jin Woo Lee,강춘식Choon Sik Kang
Abstract
The problem of furnace annealing method for Silicon direct bonding is intrinsically or extrinsically generated gases like H₂O, H₂ and hydrocarbon etc., which made the unbonded area at the bonding interface. The purpose of this research is to develop a new annealing method to remove the unbonded area. Linear annealing method used a halogen lamp as heat source with hemi-ellipse reflecting mirror and induced temperature gradient over the surface of weakly bonded silicon wafers. The interface pores, frequently appeared in the furnace annealing method at all temperature ranges, were rarely found with linear annealing method. The bonding strength of linear-annealed wafers increased continuously with increasing annealing temperature.
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