Bi-doped n-type PbTe thermoelectric materials were fabricated by mechanical alloying and hat pressing, and the sintering characteristics and thermoelectric properties of the hot-pressed PbTe were characterized. Even without Bi doping, the hot-pressed PbTe exhibited a negative Seebeck coefficient and thus n-type conduction. With increasing the hot pressing temperature from 650℃ to 800℃, the temperature at which a maximum figure-of-merit was obtained shifted to higher temperature. When hot pressed at 650℃, 0.3 wt% Bi-doped PbTe exhibited a maximum figure-of-merit of 1.33×10³/K at 200℃ With hot pressing at 750℃ and 800℃, 0.1 wt% Bi-doped PbTe exhibited maximum figure-of-merits of 1.27×10^(-3)/K at 250℃ and 1.3×10^(-3)/K at 400℃ respectively.