발간논문

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Vol.36, No.3, 454 ~ 460, 1998
Title
Thermoelectric Properties of CuBr-doped n-type 85% Bi2Te3-15% Bi2Se3 Thermoelectric Materials
황종승 , 현도빈 , 오태성 , 이은하 , 이동희 J . S . Hwang , D . B . Hyun , T . S . Oh , E . H . Lee , D . H . Lee
Abstract
For the CuBr-doped 85% Bi₂Te₃-15% Bi₂Se₃ single crystals, the temperature dependences of Seebeck coefficient, electrical resistivity, thermal conductivity, and ftgure-of-merit have been characterized at temperatures ranged from 77K to 600K. Comparing to 85% Bi₂Te₃ 15% Bi₂Se₃, the (m^*/m_0)^(3/2). μc of the CuBr-doped 85% Bi₂Te₃ - 15% Bi₂Se₃ specimens was higher than that of the undoped specimens indicating that the addition of CuBr was effective for the improvement of figure-of-merit. Electron concentration was increased with increasing CuBr content, decresing the Seebeck coefficient and electrical resistivity, and shifting the maximum of figure-of-merit to higher temperatures. A maximum figure-of-merit obtained in these experiments was 2.2×10^(-3)/K for the 0.03 wt% CuBr-doped 85% Bi₂Te₃ 15% Bi₂Se₃ single crystal.
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