발간논문

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Vol.35, No.2, 266 ~ 271, 1997
Title
Research Paper - Electronic. Magnetic & Optical Materials : Enhancement of Lateral Crystallization Rate of Amorphous Silicon induced by Ni and its Mechanism
이병일Byung Il Lee, 정원철Won Cheol Jeong, 김광호Kwang Ho Kim, 안평수Pyung Soo Ahn, 신진욱Jin Wook Shin, 주승기Seung Ki Joo
Abstract
In order to increase the growth rate of Ni Metal Induced Lateral Crystallization(MILC) of amorphous Si which shows acceptable electrical properties. Pd thin films were deposited on amorphous Si with a distance to Ni deposited area. The shorter the space between the Ni and Pd films, the faster the rate of Ni MILC, and when the space was 60 ㎛ the growth rate was 7.5 ㎛/hr. Through TEM microstructural analysis and investigation on relationships between the space and growth rate the enhanced growth rate of Ni-MILC turned out to be due to stresses generated by the formation of Pd₂Si under/at Pd deposited area. Using Pd assisted. Ni-MILC method, 0.8 ㎛/hr of MILC growth rate could be obtained at the temperature as low as 450℃.
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