Research Paper - Transformations - : Alloying Reaction of In / Sb Multi - layered Thin Films by Heat Treatment
이승호Seung Ho Lee, 이병일Byung Il Lee, 주승기Seung Ki Joo
Abstract
InSb thin films with electron mobility as high as 49,000 ㎠/V·sec were formed by heat treatment at 535℃ for 5 minutes of multi-layered(Al₂O₃/In(9,000A˚)/Sb(1 ㎛)) thin films. And it was found that the annealing time and temperature margins to get InSb films of high electron mobility were much narrow. InSb formation mechanisms of In/Sb multi-layered thin films were proposed on the base of In-Sb phase diagram.