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Vol.33, No.11, 1537 ~ 1544, 1995
Title
A Study on the Growth Behaviors of MoSi2 Diffusion Layer Formed by CVD of Si on Mo Substrate
윤진국Jin Kook Yoon, 변지영Ji Young Byun, 김재수Jae Soo Kim, 최종술Chong Sool Choi
Abstract
The growth behaviors of MoSi₂ diffusion layer formed by the reaction of the chemical vapor deposited Si with Mo substrate have been investigated in the temperature range between 850℃ and 1400℃ using coldwall horizontal reactor and SiCl₄-H₂system. The thickness of MoSi₂ diffusion layer was linearly increased with the square root of total gas flow rate of reactants and with the reactants ratio(SiCl₄/H₂) of 0.09 but constant over 0.09 due to etching process of Si by HCl at the deposition temperature of 1100℃. The growth of MoSi₂ diffusion layer on Mo substrate obeyed the parabolic rate law and rate constant was 2.26 ×10^(-5) ㎝ sec^(1/2) at 1100℃. The formation process of MoSi₂ diffusion layer was controlled by gas phase diffusion of reactants through a boundary layer to Mo substrate over 1000℃ and activation energy for the growth of it was 102 kJ/mole. But the rate determining step was solid diffusion of Si into it below 900℃ because activation energy for the growth of it was 223 kJ/mole, which was similar to that for diffusion of Si in MoSi₂
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