발간논문

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Vol.33, No.8, 1083 ~ 1091, 1995
Title
A Study on the Adhesion of Titanium Nitride Films Produced by Thermally Activated Chemical Vapor Deposition at Low Temperture
민우식 , 박종익 , 이정중 Woo Sig Min , Jong Ik Park , Jung Joong Lee
Abstract
Using TiCl₄ and NH₃ as reactive gases, titanium nitride(TiN) films could be deposited by chemical vapor deposition(CVD) at much lower temperatures(<700℃) than conventionally used ones for TiN deposition. NH₃ gas nitriding method was used to improve the adhesion of TiN film on M2 high speed steel. The nitrides formed on the substrate surface consisted of CrN and ε-Fe_(2-3)N. They had influence on the nucleation and growth mechanism of TiN, which led to more random orientation and coarser columnar grain of TiN films.
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