The Effects of Cusp Magnetic Field on the Fluid Flow and Mass Transfer in Czochralski Growth of Silicon
정병태Hyung Tae Chung, 윤종규Jong Kyu Yoon
Abstract
The effects of cusp magnetic field on the fluid flow and mass transfer were simulated by finite difference method in large-scale Czochralski single crystal growth of silicon. The flow intensities were greatly diminished and the distribution of azimutal velocities was similar to the rigid body motions when the cusp magnetic field was applied. The average concentrations and the radial uniformities of oxygen for various crucible and crystal rotation rates at solidification interface were calculated in a cusp magnetic field. The distributions of oxygen in Czochralski grown silicon were critically under the control of melt motions. The average oxygen concentrations are lower and the radial uniformity of the oxygen concentrations at solidification interface became better as the cusp magnetic field was increased. On the basis of the above results, the optimum starting conditions for the operation were numerically calculated.