발간논문

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Vol.33, No.5, 578 ~ 585, 1995
Title
Copper Single - Crystal Growth by Heat Exchanger Method
최회진Hoi Jin CHOI, 김성균Seong Gyoon KIM, 김동익Dong Ik KIM, 나형용Hyung Yong RA
Abstract
The effects of cooling velocity, melt weight and purity of copper were reported on copper single-crystal growth by Heat Exchanger Method in this paper. Copper single-crystals could be grown at the cooling velocity lower than 1℃/min. Higher purity(99.995wt%) of copper single crystal less than 7㎝ height(radius 3.5㎝) was grown when the cooling velocity was 0.34℃/min. and the height less than 3.5㎝(radius 3.5㎝) was grown with the plane front of solid-liquid interface and of semi-ellipse, and the free surface of single crystal was solidified in the end. However in the lower purity(99.93wt%) of copper, it should be solidified with plane front at the initial stage, and cell, dendrite formed finally at the cooling velocity lower than 0.5℃/min. The significant segregation were caused when the solid-liquid interface was changed from plane front to cell structure.
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