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Vol.33, No.1, 85 ~ 90, 1995
Title
Effect of S and Te on Rotational Stacking Faults of the Fine Flake Graphite Solidified from Fe - C - Si Alloys
박장식 Jang Sik Park
Abstract
The fine flake type graphite, directionally solidified from Fe-3.4 wt % C-2 wt % Si alloys doped with either 0.02 wt % S or 0.05 wt % Te, was investigated by using a transmission electron microscope. The presence of rotational stacking faults was observed in more than 90% of the graphite samples examined here, regardless of the doping element S or Te. The two elements were, however, found to have a distinctly different effect on the selection of rotation angles. The S-doping induced in the fault formation the various rotation angles predicted by theory, while the Tedoping induced angles mostly close to 30 degrees.
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