Numerical Simulation of copper Single Crystal Growth by heat Exchanger Method
최회진Hoi Jin Choi, 김성균Seong Gyoon Kim, 김동익Dong Ik Kim, 나형용Hyung Yong Ra
Abstract
Numerical simulation for copper single crystal growth by a heat exchanger method has been performed including the effects of fluid flow, conduction and radiation heat transfer using the actual geometry of growing furnace. The finite difference method based on a control volume approach and SIMPLE algorithm were used to solve the momentum and energy equations. Almost all parts of the furnace including heater, insulating materials and crucible were considered in the calculation domain and the latent heat was also accounted by an iterative heat evolution method. The effects of cooling rate of heater and crucible position and melt weight were investigated together with the role of natural convection in melt. The optimum process conditions for single crystal growth were determined. The calculated results of critical cooling rate, solidification time and the critical ratio of the height to the radius of crystal were found to be in a good agreement with the experimental results.