| When 200 Å-thick Ni films deposited on Si(111) at room temperature were in situ annealed at 650℃ for 20 minutes, epitaxial NiSi₂ layers were formed. Interfaces between NiSi₂ and Si(111) were observed using a high-resolution transmission electron microscopy. It has been known that the (111￣) sl facet formed on the A-NiSi₂/Si(111) interface. In addition to this, the (001)_(SI, A-NISI)₂, facet was found in the present study. On the B-NiSi₂/Si(111) interface, the formation of (111￣)SI//((11)￣5)B-NISI₂ and ((11)￣5)SI//(111￣)B-NISI₂ facets was found. In sample deposited 10 Å, Ni films and annealed at 500℃ for 3 minutes, nuclei of NiSi₂ were observed. Each nucleus had a hexagonal shape. The NiSi₂ nucleus grew with various facets in order to minimize the total interfacial energy of each nucleus. |
|
