A Study on the Microstructure of DC & RF Sputtered MoS2 Films
황정숙Jung Sook Hwang, 이경준Kyung Joon Lee, 김영환Young Hwan Kim
Abstract
The microstructure of DC & RF sputtered MoS₂ thin films have been studied. The films have been deposited onto the stainless steel, glass and Si wafer with 4$quot; DC/RF magnetron sputtering system. The sputtered MoS₂ films showed well defined columnar-plate structure and the preferential orientation was found to be (100). The grain size increased with increase of the substrate temperature(A.T.∼350℃) and the sputtering power density(0.58W/㎠∼1.45W/㎠). AES analysis indicated that the ratio of S(152eV)/Mo(186eV) was about 8.1 which was smaller than that of the pure MoS₂(8.9). Exposure to atmosphere resulted in oxygen diffusion into MoS₂ thin films due to lack of sulfur in sputtered thin films.