발간논문

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Vol.32, No.7, 841 ~ 851, 1994
Title
The effect of impurities on the solidification behavior of thin silicon film in SOI - ZMR
이시우Si Woo Lee, 주승기Seung Ki Joo
Abstract
Effects of dopant additions on interface stability in ZMR(Zone Melting Recrystallization) of silicon thin films have been investigated through computer simulation and experiments. According to computer simulation, it has been found that critical scanning speed (V^*) exists such that the critical wavelength λ at the solidifying interface increases with scanning speed below (V^*) due to radiative supercooling, while λ decreases with scanning speed above (V^*) due to constitutional supercooling. It turned out that (V^*) decreased with additions of B and P dopants on silicon thin films by ion implantation before ZMR and interface stability change with respect to scanning speed agreed well with expectations from computer simulation.
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