발간논문

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Vol.32, No.3, 313 ~ 321, 1994
Title
Growth Rate of MoSi2 Layer Formed by CVD of Si on Mo Substrate and Oxidation Behavior of MoSi2 / Mo Couple
윤진국Jin Kook Yoon, 변지영Ji Young Byun, 이강욱Kang Wook Lee, 이종무Jong Moo Lee, 김재수Jee Soo Kim
Abstract
Growth rate of MoSi₂ layer formed by the chemical vapor deposition of Si on Mo substrate and oxidation behavior of Mo coated by MoSi₂ were investigated and the experimental data were analyzed by theoretical parabolic rate equations for growth of intermediate phases in a Si-Mo diffusion couple. The equations well described the facts that growth of MoSi₂ layer on Mo and Mo_5Si₃ layer formed at interface in MoSi₂/Mo couple during oxidation test obeyed the parabolic rate law. The theoretical lifetime of MoSi₂ layer against oxidation was proportional to the square of its thickness. However, coating lifetime was substantially less than the predicted one because MoSi₂ layer was not defect-free. Activation energy of growth of MoSi₂ layer on Mo substrate by the CVD method was 11.6㎉ per mole.
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