발간논문

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Vol.31, No.11, 1409 ~ 1418, 1993
Title
Effect of Substrate Preheating on the Crystallization of silicon thin films in Zone Melting Recrystallization
반효동Hyo Dong Pan, 이시우Si Woo Lee, 임인곤In Gon Lim, 주승기Seung Ki Joo
Abstract
Solidification behaviors of silicon thin film in zone melting recrystallization with halogen lamps have been studied in terms of the substrate preheating temperature. Computer simulations were carried out to analyze the temperature profiles and interface instabilities in liquid and solid phases near the solidifying interface. It is expected from the computer simulations that when the preheating temperature is relatively low, the non-planar interface should be developed at the solidifying front and defect density should be low. On the other hand, when the preheating temperature is relatively high, the planar interface and high defect density are expected. At low preheating temperature, below 1000℃, regular defects corresponding to uniform cells were observed. Above 1000℃ Y-shaped irregular defects corresponding to planar interface were observed.
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