| The effect of N₂ pressure on the microstructure and properties of AlN films, which were formed on Si(100) single crystal by the activated reactive evaporation(ARE) methods, was studied. According to the ESCA and FTIR analysis, as well as the transparency of the film, it could be concluded chat films of Al-N bonding were formed. At high N₂ pressure, films mainly with (002) crystal orientation were formed. It was also found that the deposition rate and the packing density decreased, while the grain size and the surface roughness of the film increased with increasing N₂pressure. It was assumed that as N₂ pressure increases, the number of Al particles and the ratio of Al to N₂ particles, as well as the kinetic energy of the incident particles, decrease, causing such changes in the microstructure and properties of the deposited AlN films. |
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