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Vol.31, No.2, 162 ~ 169, 1993
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| Title |
| Annealing Characteristics of Throuth - Oxide Phosphorus Ion - Implanted Si |
| 김창수Chang Soo Kim, 김상기Sang Gi Kim, 조양구Yang Ku Cho, 김용일Young Il Kim, 권오준Oh Joon Kwon, 이재갑Jae Gab Lee |
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| Abstract |
| Annealing behavior of phosphorus ion-implanted p-type (100) Si with and without silicon oxide (dose : 1×10^(15) ion/㎠, energy : 160 keV) was investigated by means of double crystal X-ray diffratometry(DXRD) and secondary ion mass spectroscopy(SIMS). Rocking curves and concentration profiles of the samples annealed at 700-900℃ reveal two strained layers, one layer in which a lattice constant is larger than the intrinsic value, d_0, the other layer smaller than d_0. The former is related to the Si surface layer of 50nm into which recoil-implanted oxygen penetrated, and the latter to the deep layer within the recrystallized region. As annealing temperature increases, lattice strain of the layers decreases. The strained layers measured by rocking curves are recovered after 1050℃ annealing. Annealing behavior of the recoil-implanted oxygen in the d$gt;d_0strained layer is analyzed with SIMS concentration profiles. The results show that the annealing behavior is consistent with the DXRD rocking curve measurements. |
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