발간논문

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Vol.29, No.11, 1135 ~ 1141, 1991
Title
Thermoelectric Properties of Bi2Te3 - base Thick Films
김창모Chang Mo Kim, 장경욱Kyung Wook Jang, 심재동Jae Dong Shim, 이동희Dong Hi Lee
Abstract
Thermoelectric properties of Bi₂Te₃-base thick films were studied in order to obtain the optimum manufacturing conditions;binder contents, sintering temperature and time, and amounts of dopants. Blank screen printing and subsequent sintering process were proved to be suitably; for the fabrication of thick films, if the fine powders(◎2㎛)were mixed with 18% of the binder;propylene glycol 3wt% and ethyl alcohol 15wt%. The thick films of intrinsic Bi₂Te₂ were found to have n-type property and the figure of merit of 4.25×10^(-4)K^(-1) when doped with 4 at.% Se and sintered at 450℃ for 4 hrs. The figure of merit of sintered p-type Bi_(0.5)Sb_(1.5)Te₃ and n-type Bi₂Te₂Se_(0.3) with 10 at% Sb increased as the sintering temperature became higher;the former showed maximum values of 5.96×10^(-4)K^(-1) when sintered at 550℃ for 4 hrs, and the latter could be reached to 4.62×10^(-4)K^(-1) when sintered at. 525℃ for 4 hrs.
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