발간논문

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Vol.29, No.11, 1107 ~ 1114, 1991
Title
The Effects of SiO2 Concentration in Al2O3 on Wettability between Al2O3 and Al by the Dip Coverage method
김경민K . M . Kim, 김기배K . B . Kim, 조순형S . H . Cho, 김헌주H . J . Kim, 윤의박E . P . Yoon
Abstract
In this study wettability between Al₂O₃ and Al to the variation of SiO₂ concentration in Al₂O₄ was investigated. Alumina specimens containing from 0 Lo 20wt%SiO₂ were prepared by using the coventional ceramic processing techniques. Wettability was measured by using the dip coverage method and was compared with wettability measured by using the sessile drop method. Also the distributions of Al and Si element around the interface were investigated. As the results of these investigation, wetting process in the dip coverage method was shorter than that of the sessile drop method, and the equation of reaction rate for wetting process between alumina and aluminium was almost agreed with the following equation. Qn[ 1/(1- α)]=K_0(t-τ²) Both the started time and the completed time of wetting became short with SiO₂ concentration and this tendency bacame severe with higher melt temperature. The Si content around the interface did not change.
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