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Vol.29, No.9, 877 ~ 885, 1991
Title
Effects of WF6 Gas Rate on the Properies of Selective CVD - W by SiH4 Reduction
이종무Chong Mu Lee, 임영진Young Jin Im, 김의송Eui Song Kim
Abstract
Effects of WF_6 gas flow rate on the propeerties of selective CVD-W by SiH₄ reduction have been investigated. SEM microstructure for W film changes from a leaf-shaped large grain, via a starshaped small grain and a small oval grain to a fine grain with decreasing WF_6 flow rate. The thickness of WSi_x transition layer increases with increasing for SiH₄/WF_6=R$lt;0.9, but it decreases rapidly for with increases 0.9 $lt; R $lt; 1.1 These changes seem to be related to the phase transition from α-W to β-W. In addition deposition rate tends to decrease, and resistivity also tends to decrease with increasing WF_6 flow rate. The largest decrease in deposition rate and resistivity occurs for the WF_6 flow rate in the range of 9-11 sccm.
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