| Diamond film was deposited on silicon (100) wafer by R F plasma CVD method, using the methane and hydrogen gas mixture. The relationship between the diamond morphologies and the process variables was investigated with SEM, XRD, and Raman Spectroscopy. Gas mixture(CH₄,: 0.5∼2% of total gas volume) was fed at the flow rate of 50 sccm and the system pressure was in the range of 5∼20 torr. Substrate was heated by the inductive heating and the temperature was controlled by the setup of angle in the plasma. The RF power was 1 KW and its frequency was 13.56MHz. Diamond film having a clear crystal habit was deposited when the substrate temperature was about 900℃ and the methane concentration was low. With increasing methane concentration and lowering substrate temperature, films tend to contain amorphous phase as well as graphitic carbon phase. |
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