| The synthesis of diamond by applying the Hot filament CVD method and using acetone and hydrogen gases has been studied. The experimental variables were the substrate temperature, reactor pressure and concentration of acetone gas. The deposition conditions were as follows : acetone concentration 0.3-1.25 vol.%, substrate temperature 640-840℃, reactor pressure 10-90 torr, filament temperature 2100±50℃, deposition time 1-12 hrs. The used substrate was a single crystal Si wafer with (100) plane as a deposition plane. As the result, it has been found that the well defined diamond particles and films are produced when the acetone concentration is low and the substrate temperature is high, and the reverse conditions induce a formation of the poorly-defined or ball-like diamond. The size of diamond particles or films increased as the acetone concentration and reactor pressure increased. Deposition rate of diamond particles was about 3-4 ㎛/hr.. |
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