발간논문

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Vol.28, No.2, 185 ~ 191, 1990
Title
Evolution of surface Morpology During LPE growth of Hg0.7Cd0.3Te
임성욱S . W . Lim, 최인훈I . H . Choi, 김재묵J . M . Kim, 송원준W . J . Song, 문성욱S . W . Moon, 서상희S . H . Suh
Abstract
HgCdTe is the most widely used material for infrared photodetectors. HgCdTe epi-layers were grown on CdTe substrates with (111) orientation, using a slider LPE(Liquid Phase Epitaxy) technique. The change of surface morphology during LPE growth of Hg_(0.7)Cd_(0.3)Te was investigated. The wave-like surface at the initial stage of growth has transformed gradually to the terrace-like surface and the terrace width has increased with increasing growth time. Infrared tansmission was used to determine the composition of HgCdTe epi-layers.
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