The kinetics of crystallization process of amorphous Fe_(80-x)Co_xSiP_(14)(10≤X≤50) alloys has been investigated by measuring electrical resistivity in order to understand the crystallization mechanism in this system. The amorphous ribbons were prepared by rapid quenching method using a single roll. The crystallization processes with respective composition are as follows, amorphous→amorphous+ (Co -Fe)₂P→α-Fe(Co, Si)+Fe₃P+(Co-Fe)₂P for X= 10, amorphous→α-Fe(Co, Si)+Fe₃P+(Co -Fe)₂P for X=20, and amorphous-α-Fe(Co, Si)+(Co-Fe)₂P for (30≤X≤50). The first and the second activation energies for the composition of X=10 are 26 ㎉/mole and 89 ㎉/mole, respectively, The activation energy for the composition of (20≤X≤50), whose crystallization occurs in a single step, is in the range of 80-63 ㎉/mole and decreases with Co content. The first and the second crystallization temperatures of the amorphous of X= 10 are 717k and 730k, respectively. For the composition of (20≤X≤50), the crystallization temperature is in the range of 725-670K and decreases with Co content. |
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