발간논문

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Vol.25, No.10, 706 ~ 711, 1987
Title
Electrical Properties of Co - Early Transition Metal Thin Film Alloys
김희중H . J . Kim, 한석희S . H . Han, 천성형J . S . Chun, 강일구I . K . Kang
Abstract
Electrical resistivity and Hall coefficient of Co-early transition metal (ETM; Zr, Nb and Mo) thin film alloys were studied. Electrical resistivity was linearly increased with increasing solute concentration in spite of the structural difference. The increasing rate of electrical resistivity per 1 at % of solute was about 15,10 and 5μΩ㎝ for Nb, Zr and Mo, respectively. Electrical resistivity slightly decreased with increase of the input power and sputtering time and rapidly increased with increase of Ar pressure. From the relation between electrical resistivity and Hall coefficient, it was considered that the Hall effect in Co-Zr amorphous thin film was controlled by side-jump mechanism.
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