Effect of Dopants on the Microstructure of the Doped Tungsten Wire
김재수Jae Soo Kim, 홍종휘Jong Hwi Hong, 김현태Hyon Tae Kim, 최주Ju Choi
Abstract
The effect of dopants, Al₂O₃, K₂O and SiO₂ (AKS), on the microstructure of tungsten ingots and wires has been investigated. It was found that rapidly heated ingots showed finer grain size with low degree of sintering than slowly heated ingots. The AKS doped ingot showed the lowest degree of sintering whereas the KS doped ingot showed the highest. Secondary recrystallized grain structure was closely related with bubbles formed in the drawn wire. The AKS wire showed the highest bubble density whereas KS showed the lowest. As density of bubble increased, the secondary recrystallization temperature of the wire also became increased.