| The growth rate and the mechanical properties of chemically vapor deposited TiC on WC-6％ Co substrate were investigated by depositing TiC on varying deposition temperatures, total pressure in the reaction chamber, and the partial pressure of CH₄in gas mixtures. TiC is deposited by two different reactions; such as substrate reaction and hydrocarbon reaction. Each activation energy was calculated at 19 ㎉/mole and 70 ㎉/mole, respectively. The growth rate of TiC coating layer was increased with deposition temperatures, the total pressure in the reaction chamber, and the partial pressure of CH₄in gas mixtures. The microhardness of TiC coating layer was increased until the thickness of coating layer was up to 7㎛. The microhardneas of TiC coating layer was increased as the partial pressure of CH₄was increased. When the partial pressure of CH₄in the gas mixtures was increased TiC coating layer was pronounced <100> preferred orientation. It was found that ηcarbide which is formed by substrate reaction is Co_6W_6C. |
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