| The CuCl₂-catalyzed reaction of silicon metal powder and hydrogen chloride by the flow method is studied in order to find a convenient method of obtaining trichlorosilane (TCS), a widely used starting material for preparing semiconductor-grade silicon. The effects of varying the concentration of CuCl₂, reaction temperature, and the flow rate of HCl are studied. The optimum temperature for the reaction is found to be the range between 385℃ and 420℃, and as the temperature increases beyond this range, tetrachlosilane (TET) content of the product becomes high. The yield of TCS is found to increase when the flow rate of HCl increases. Under the optimal conditions with 10 wt, % CuCl₂ concentration, 400℃ reaction temperature and the flow rate of 400-600㏄/min, the yield of TCS is about 90 wt, % of the total product. |
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