발간논문

Home > KJMM 논문 > 발간논문

Vol.13, No.2, 146 ~ 153, 1975
Title
Dislocation Mobility in Silicon Single Crystals
최선근 Choi Sun Keun
Abstract
The average velocities of 60°-dislocations in silicon single crystals have been measured be Stein and Low method. The stress dependence of dislocation velocities is described as v∝τ^m at a given temperature over the stress range of 0.5∼5 ㎏/㎟. It was observed that stress exponent m depended on temperature. The temperature dependence of dislocation velocities is described as v∝exp (-E/kT) with activation energy of 1.5 electron volt at the resolved shear stress of 2 ㎏/㎟.
Key Words
| PDF
대한금속∙재료학회 │ (06633) 서울시 서초구 서초대로 56길 38 대한금속∙재료학회 회관 (서초1동 1666-12번지)
Tel : 070-4266-1646 │ FAX : 02-557-1080 │ E-mail : metal@kim.or.kr
Copyright ⓒ 2013 사단법인 대한금속∙재료학회 All rights reserved.