Diffusion of Copper in high Purity Cadmium sulfide single crystal
정기형Kie Hyung Chung, 박혜일Hae Ill Bac
Abstract
Copper was diffused into high purity CdS single crystal specimens with various electrical resistivities. For C-axis, the diffusion constant D have been measured as 9.2×10^(-3) exp(-1.23 eV/kT) ㎠/sec. In this measurement, the rate of diffusion was larger in the specimen with low resistivity. It was also conformed from the present experiment that the method of capacitance and the metallurgical microscope technique could be applied to the study of diffusion of cadmium sulfide with low resistivity (of the order of ohm-cm to kilo ohm-cm).