Effect of SiC Addition on Microstructure of WC - 6% Co Cemented Alloy
박원구Won Koo Park, 은광용Kwang Yong Eun, 한봉희Bong Hee Hahn
Abstract
Effects of SiC addition to the cemented WC-6% Co alloy were investigated. WC and SiC powders were mixed, compacted and vacuum heated. Then they were recrushed to WC-SiC powders before addition to the cemented alloy. X-ray powder diffraction analysis was performed for the various WC-SiC powders. The (001) plane of tungsten carbide seemed to grow anisotropicaily in the WC-SiC powder which was vacuum heated to 1700℃. After mixing of the alloy powders, compacting and presintering, vacuum. sintering for the WC-SiC-6% Co alloys was performed at temperatures between 1450℃ and 1550℃. It is considered that SiC promoted the anisotropic grain growth of tungsten carbide in the directions parallel to (001) plane and consequently angular carbide grains seemed to appear in the microstructure of the cemented WC-SiC-6% Co alloy. Either increasing SiC content or raising sintering temperature promoted the growth of α₂ and Co grains in the WC-SiC-6% Co alloy.