Refinement of Primary Silicon Crystals by Sulphur Addition in Hypereutectic Al - Si Alloys
최수웅Soo Woong Choi, 김수영Soo Young Kim, 이상익Sang Ik Lee
Abstract
This investigation was carried out to study effects of an amount of sulphur addition, holding time and pouring temperature on refinement of the primary silicon crystals in the hypereutectic Al-Si alloy containing about 21% silicon by the method of metallography. The results obtained are as follows: Addition of 0.4% sulphur to a melt at 750℃ resulted in refinement of primay silicon crystals. The best refining effect was obtained by holding the melt at 850℃ for about 20 minutes after sulphur addition. Refining effect did not improve by holding the melt for more 20 minutes.